Fig.6
From: Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor

Transfer characteristics of DM-DSTGTFET biosensor for different values of cavity thickness (Tc) at Vd = 0.5 V, Vg = 1.5 V and k = 23
From: Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor
Transfer characteristics of DM-DSTGTFET biosensor for different values of cavity thickness (Tc) at Vd = 0.5 V, Vg = 1.5 V and k = 23