TY - JOUR AU - Mi, Guanyu AU - Lv, Jian AU - Que, Longcheng AU - Zhang, Yi AU - Zhou, Yun AU - Liu, Zhongyuan PY - 2021 DA - 2021/02/27 TI - A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon JO - Nanoscale Research Letters SP - 38 VL - 16 IS - 1 AB - In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the average absorptivity of 400–2200 nm band before annealing is 96.81%, and the absorptivity maintains at 81.28% after annealing at 600 degrees. Meanwhile, black silicon prepared under the new technology is used in double four-quadrant photodetector, the results show that, at a reversed bias of 50 V, the average unit responsiveness is 0.528 A/W at 1060 nm and 0.102 A/W at 1180 nm, and the average dark current is 2 nA at inner quadrants and 8 nA at outer quadrants. The dual four-quadrant photodetector based on near-infrared enhanced black silicon has the advantages of high responsiveness, low dark current, fast response and low crosstalk, hence it is appropriate for a series of direction of applications, such as night vision detection and medical field. SN - 1556-276X UR - https://doi.org/10.1186/s11671-021-03499-x DO - 10.1186/s11671-021-03499-x ID - Mi2021 ER -