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Table 1 The geometry parameters of structure

From: A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon

Outer diameter Inner diameter Thickness Reversed bias voltage Isolation slot width
8 mm 2 mm 0.2 mm 50 V 0.1 mm
Response current Dark current Rising time
0.53 A at 1060 nm 5.2 nA 12 ns