Table 1 The geometry parameters of structure
From: A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon
Outer diameter | Inner diameter | Thickness | Reversed bias voltage | Isolation slot width |
|---|---|---|---|---|
8 mm | 2 mm | 0.2 mm | 50 V | 0.1 mm |
Response current | Dark current | Rising time |
|---|---|---|
0.53 A at 1060 nm | 5.2 nA | 12 ns |