Skip to main content
Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Fig. 3

Synthesis of InGaP nanowires. a Diameter distribution of InGaP nanowires at different growth temperatures (550–630 °C) with embedded characteristic SEM images. b XRD spectra of InP (red curve) and InGaP (blue curves) nanowires at different growth conditions. XRD spectrum of Si(111) substrate is shown in the inset as a reference. SEM (c) and the corresponding EDS spectra (d) of a InGaP nanowire grown at 550 °C. The gallium powder weight is 3.0 mg

Back to article page
\