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Table 1 Seebeck coefficient, electrical conductivity, special contact resistance and power factor of p and n-type bulk Si and Si substrate with undoped and doped porous Si samples at room temperature

From: Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

  Bulk p-Si Bulk n-Si Undoped p-porous Si Undoped n-porous Si Doped p-porous Si Doped n-porous Si
Seebeck (μV/K) 450 ± 6 485 ± 8 696 ± 6 650 ± 7 491 ± 10 480 ± 10
Electrical conductivity (S/m) 10,000 10,000 150 ± 10 385 ± 12 1160 ± 3 1390 ± 3
Special contact resistance (mΩ-cm2) 1.88 1.25 1.35 1.16
Power factor [μW/(m K2)] 2025 2304 73 162 280 320