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Table 1 Seebeck coefficient, electrical conductivity, special contact resistance and power factor of p and n-type bulk Si and Si substrate with undoped and doped porous Si samples at room temperature

From: Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

 

Bulk p-Si

Bulk n-Si

Undoped p-porous Si

Undoped n-porous Si

Doped p-porous Si

Doped n-porous Si

Seebeck (μV/K)

450 ± 6

485 ± 8

696 ± 6

650 ± 7

491 ± 10

480 ± 10

Electrical conductivity (S/m)

10,000

10,000

150 ± 10

385 ± 12

1160 ± 3

1390 ± 3

Special contact resistance (mΩ-cm2)

1.88

1.25

1.35

1.16

Power factor [μW/(m K2)]

2025

2304

73

162

280

320

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