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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Fabrication of Rectification Nanosensors by Direct Current Dielectrophoresis Alignment of ZnO Nanowires

Fig. 5

a TEM images of the individual ZnO NW device that was fabricated using a voltage of 3 V in the alignment process and exhibited a rectifying IV characteristic. The atomic TEM image of the drain side of ZnO NW and the area corresponds to the left square in a. The atomic TEM image of the middle of ZnO NW and the area corresponds to the middle square in a. The atomic TEM image of the source side of ZnO NW and the area corresponds to the right square in a

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