Skip to main content
SpringerLink
Account
Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

Fig. 5

Simulated energy band results of the p-Si/MoOX contact. a The relationship between the work function and ND of MoOX (ND-MO). b The p-Si, MoOX and the total band bending for p-Si/MoOX contact. The acceptor concentration of p-Si is 1 × 1016 cm−3. Simulated band diagrams of p-Si/MoOX contact as the ND-MO is c 1 × 1016 cm−3 and d 1 × 1020 cm−3, respectively

Back to article page

Search

Navigation