Fig. 6From: Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar CellsContact resistance measurements of the 10-nm-thick MoOX films on polished silicon wafers a without post-annealing, with post-annealing at b 100 °C, c 200 °C and d 300 °CBack to article page