Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

Table 1 Parameters used for AFORS-HET simulation

Parameters	p-Si	MoO_X
Layer thickness (cm)	1 × 10^–4	1 × 10^–6
Doping concentration (cm⁻³)	1 × 10¹⁶ (acceptor)	1 × 10¹⁶–1 × 10²⁰ (donor)
Relative dielectric constant	11.9	10
Electron affinity (eV)	4.05	6.2
Band gap (eV)	1.124	3.3
Effective conduction band density (cm⁻³)	2.843 × 10¹⁹	1 × 10²⁰
Effective valence band density (cm⁻³)	2.682 × 10¹⁹	1 × 10²⁰
Electron mobility (cm²/Vs) [45]	1107	30
Hole mobility (cm²/Vs) [45]	424.6	2.5