Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

Table 3 O/Mo ratio and work function of the post-annealed 10-nm-thick MoO_X films on silicon wafers. Effective minority carrier lifetime of silicon wafers covered by the post-annealed MoO_X films

Annealing temperature (°C)	None	100	200	300	Without MoO_X (bare Si)
O/Mo ratio	2.958	2.964	2.942	2.957
Work function (eV)	6.24	6.27	6.21	6.25
Effective minority carrier lifetime (μs)	26.70	21.53	15.41	9.44	7.76