Fig. 10
a Graphical representation of vdW exfoliation method. When a Si/SiO2 substrate is attached to the molten tin alloy, the created vdW force between the tin oxide and SiO2 surface help to delamination and following attachment of 2D oxide film to the SiO2 substrate. b The AFM image of the monolayer (0.6 nm) and bilayer (1.2 nm) tin oxide film. c The TEM image of tin oxide film developed in controlled atmosphere. d The HRTEM of tin oxide film developed in ambient atmosphere with mixed SnO and SnO2 structure. e The HRTEM image of SnO film developed in controlled atmosphere. f The bandgap of monolayer SnO film measured by electron energy loss spectroscopy. g The I-V characteristics of fabricated SnO FET device at various gate voltages. Reprinted with permission from [156]