Fig. 15

The optical image of Cu/MoS₂ double layer/Au memristor device with scale bar of 100 μm accompanied by the graphical scheme of device with top Cu electrode and bottom Au electrode. The memristor’s crossbar area is 2 × 2 μm². b The I-V curve of memristor device with bipolar RS with the 0.25 V Set voltage and − 0.15 V Reset voltage. e The logarithmic scale I–V curve of device for the pristine state before and after forming process, and for LRS and HRS after the forming process. Reprinted with permission from [173]