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Fig. 16 | Nanoscale Research Letters

Fig. 16

From: 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

Fig. 16

a Typical logarithmic scale depiction of I–V sweeping graph of Pt/In-doped TiO2/Au memristor. b Device is set off, the metallic cations are distributed in top layer of In-doped TiO2 film. c The formation of filamentary conductive channels, the device is set On (Set, stage 1). d The depletion of metallic cations adjacent to the bottom electrode. The device is set off again (Reset, stage 2). e By imposing the reverse gate voltage, the metallic cations again move toward the cathode electrode (top Pt electrode) and again form a metallic cation bridge and the device is set On (Set-stage 3). f By depletion of metallic cations, at Pt electrode the device is set off again (Reset, stage 4). Reprinted with permission form [174]

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