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Fig. 21 | Nanoscale Research Letters

Fig. 21

From: 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

Fig. 21

a The photoinduced nociceptive behavior of Ga2O3 (N2)/TiO2-based heterostructured devices. The effect of light intensity (λ = 655 nm) on threshold time (t0) and saturation time (ts) of Ga2O3 (N2)/TiO2 nociceptor. The light frequency was 20 Hz. b The relaxation characteristics of Au- Ga2O3 (N2)/TiO2-ITO nociceptor. The light frequency was 20 Hz. c The distinction of photoresponse behavior of Au-Ga2O3 (N2)/TiO2-ITO nociceptor in normal and abnormal state. The light frequency was 20 Hz. d The allodynia and hyperalgesia behavior of Au-Ga2O3 (N2)/TiO2-ITO opto-nociceptor. Reprinted with permission from [179]

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