Table 1 Growth of 2D heterostructured films via CVD. Reprinted with permission from [93]
Type | Materials/substrate | Methods | Specifications |
|---|---|---|---|
Vertical heterostructures | MoS2/WS2 | one-step CVD: 10 mg of W + 100 mg of Te, 25 mg of MoO3, 500 mg of S; Si/SiO2 (285 nm); 100 cm3 Ar; 850 °C, 15 min; atmospheric | triangular MoS2 and WS2; type II band alignment |
Vertical heterostructures | MoS2/graphene | graphene: Au foil, AP, CH4 1.5 cm3, H2 30 cm3, Ar 200 cm3, 970 °C MoS2: MoO3(530 °C), S (102 °C), substrate (680 °C), Ar/H2 (50/5 cm3) | monolayer graphene film at bottom; monolayer layer MoS2 at top; weak n-doping level |
Lateral heterostructures | MoS2/h-BN | Ni−Ga/Mo foil substrate, NH3− H3 (110−130 °C), Ar/H2 75 cm3, 30 min, 1000 °C; 4 cm3 H2S precursor, 680 °C, 25 min, 10 sccm Ar | with whole sizes up to 200 μm2 |
Lateral heterostructures | MoS2/WS2 | one-step CVD: 10 mg of W + 100 mg of Te, 25 mg of MoO3, 500 mg of S; Si/SiO2 (285 nm); 100 cm3 Ar; 650 °C, 15 min; atmospheric | WS2 − MoS2 interface roughness is four unit cells with a width of 15 nm |
Lateral heterostructures | MoS2/WSe2 | step 1: 0.6 g ofWO3 260 °C (Se), Ar/H2 (90/6 cm3) 20 Torr, 925 °C, 15 min; step 2: 0.6 g ofMoO3 190 °C(Se), Ar (70 cm3) 40 Torr, 755 °C, 15 min | junction depletion width is ∼320 nm, type II band alignment |
Lateral heterostructures | MoS2/MoSe2 | 0.7 g of MoO3, 0.4 g of S, 0.6 g of Se, 750 °C for sulfurization, 700 °C with 5 cm3 H2 for selenization, 15 min | triangular geometry thickness of 0.8 nm interface transition in scale of ∼40 nm |
Lateral heterostructures | graphene/BN | graphene: Cu foil, APCVD, 1050 °C, Ar/H2 (930/60 cm3) CH4 20 cm3 hydrogen etch graphene BN: NH3−BH3, 120 °C, 10−30 min | zigzag-oriented boundaries; sharp interface boundary with width of 0.5 nm |