Table 2 Review of the reported ALD deposition of ultra-thin 2D TMDC nanofilms. Reprinted with permission from [94]
Semiconductor materials | Precursors | ALD window | Materials structure |
|---|---|---|---|
WS2 | WF6/H2 plasma/H2S | 300 °C–450 °C | Nanocrystalline |
WS2 | WF6/H2S + Si layer catalyst | 300 °C–450 °C | Nanocrystalline |
WS2 | WCl5/H2S | 390 °C | 2H-phase |
WS2 | W(CO)6/H2S | 175 °C–205 °C | Amorphous |
WS2 | WH2(iPrCp)2/O2 plasma | 300 °C | Hexagonal |
WSe2 | WCl6/DESe | 600 °C (5L), 700 °C (3L), 800 °C (1L) | Well-crystallized, hexagonal |
Bi2S3 | Bi(thd)3/H2O | 300 °C | Orthorhombic |
Bi2S3 | Bi(thd)3/H2S | 125 °C–300 °C | Polycrystalline orthorhombic |
Bi2Te3 | BiCl3/(Et3Si)2Te | 160 °C–250 °C | Crystalline rhombohedral |
Bi2Te3 | Bi(NMe2)3/(Et3Si)2Te | 70 °C, 120 °C | Polycrystalline rhombohedral |
MoS2 | MoCl5/H2S | 300 °C | Well-crystallized, hexagonal |
MoS2 | MoCl5/H2S | 330 °C–450 °C | Well-crystallized, hexagonal |
MoS2 | MoCl5/H2S | 450 °C | Well-crystallized, hexagonal |
MoS2 | MoCl5/H2S | 375 °C, 475 °C | Small crystallites |
MoS2 | Mo(NMe2)4/HS(CH2)2SH | 50 °C | In H2: Nanocrystalline |
MoS2 | Mo(CO)6/H2S plasma | 175 °C–225 °C | Polycrystalline 2H-MoS2 |
MoS2 | (NtBu)2(NMe2)2Mo/O3 | 300 °C | 2H-phase |
MoS2 | Mo(CO)6/O2 plasma | 200 °C | Polycrystalline |
MoS2 | (NtBu)2(NMe2)2Mo/O2 plasma | 150 °C | Function of the process |
FeSx | Fe(amd)2/H2S | 80 °C–200 °C | Well-crystallized |
GaS | Ga2(NMe2)6/H2S | 125 °C–225 °C | Amorphous |
GeS | N2,N3-di-tert-butylbutane-2,3- diamine Ge (II)/H2S | 50 °C–75 °C | Amorphous |
InSe | InCl3/H2Se (8% in Ar) | 310 °C–380 °C | Hexagonal (γ-InSe) |
In2Se3 | InCl3/(Et3Si)2Se | 295 °C | Crystalline |
γ-MnS | Mn(EtCp)2/H2S | 100 °C–225 °C | T < 150 °C: (γ-MnS) T > 150 °C: (α-MnS)/γ-MnS |
Sb2Se3 | SbCl3/H2Se | 270 °C–320 °C | Orthorhombic |
Sb2Te3 | SbCl3/(Et3Si)2Te | 60 °C–140 °C | Crystalline rhombohedral |
NiS | Ni(thd)2/H2S | 175 °C–350 °C | Polycrystalline β-NiS |
TiSx | TiCl4/H2S | 400 °C–500 °C | Hexagonal on soda Amorphous on Rh |
SnS | Sn(acac)2/H2S | 80 °C–225 °C 80 °C–160 °C 390 °C | Long pulse: cubic Short pulse: orthorhombic T ≥ 300 °C: Orthorhombic |
Bi2Te3/Sb2Te3 | BiCl3/(Me3Si)2Te & SbCl3/(Me3Si)2Te | 165 °C–170 °C | Polycrystalline, |
InSe/Sb2Se3 | InCl3/H2Se &SbCl3/H2Se | 310 °C | – |
WS2/SnS | WCl5/H2S& Sn(acac)2/H2S | 300 °C | Hexagonal/ Orthorhombic |