Table 3 Review of the reported ALD deposition of ultra-thin 2D metal oxide films. Reprinted with permission from [94]
Semiconductor materials | Precursors | ALD window | Materials structure |
|---|---|---|---|
WO3 | W(CO)6/H2O2 | 180 °C–200 °C | Amorphous |
WO3 | W(CO)6/O3 | 195 °C–205 °C | Partially crystalline as-deposited Crystallinity enhanced after annealing |
WO3 | W(CO)6/H2O | 150 °C–320 °C | Amorphous layer completely crystallizes into polycrystalline film under post-annealing |
WO3 | (tBuN)2 W(NMe2)2/ H2O | 250 °C–350 °C | Crystalline |
(tBuN)2 W(NMe2)2/ H2O | 300 °C–350 °C | Amorphous as-deposited | |
WO3 | WO2(tBuamd)2/H2O | 120 °C–270 °C | Crystallize as WO3 nanowires |
WO3 | WF6/H2O | 30 °C–180 °C | Amorphous |
W2O3 | W2(NMe2)6/H2O | 140 °C–200 °C | Amorphous |
Al2O3 | TMA/H2O | 180 °C | Amorphous |
AlOx | TMA/H2O | 90 °C | Amorphous |
TiO2 | TiCl4/H2O or O2 | 30 °C–180 °C | Amorphous |
TiO2 | TDMAT/H2O | 150 °C | Amorphous |
TiO2 | TDMAT/H2O | 250 °C | As-deposited amorphous, Annealed crystalline: T > 280 °C Anatase T > 400 °C rutile |
ZnO | DEZ/H2O | 200 °C | Single-layer ZnO on graphene presents graphene-like structure instead of wurtzite structure |
MoO3 | (tBuN)2(NMe2)2Mo/O2-PEALD | 50 °C–350 °C | Amorphous films at < 200 °C Polycrystalline at > 250 °C |
MoO3 | (tBuN)2(NMe2)2Mo/O2-PEALD | 150 °C | 2H-MoS2 after annealing at T > 900 °C |
MoO3 | (tBuN)2(NMe2)2Mo/O2-ALD | 300 °C- | 2H-MoS2 after annealing at T > 900 °C |
MoO3 | Mo(CO)6/O3 | 152 °C–175 °C | Amorphous as-deposited α- and β-MoO3 phases after annealing at 500 °C |
MoO3 | MoO2(R2amd)2 (R = Cy; iPr)/O3 | 150 °C–225 °C | Amorphous |
MoO3 | CoCp2, Co(thd)2 or Mo(CO)6/O3, H2O or (O3 + H2O) | 167 °C | Amorphous as-deposited Crystallize into β-CoMoO4 under annealing |