Table 4 Summary of properties of 2D surface films of liquid metals. Reprinted with permission from [168]
2D film | Based alloy | Synthesis method | Specifications |
|---|---|---|---|
Ga2O3 | Gallium Galinstan (EGaInSn) | vdW exfoliation (Touch printing) Gas injection in aqueous media | Crystalline (Exfoliation) Amorphous (gas Injection) |
Al2O3 | Galinstan-Al | vdW exfoliation (Touch printing) Gas injection in aqueous media | Crystalline (Exfoliation) Amorphous (gas Injection) |
Gd2O3 | Galinstan-Gd | vdW exfoliation (Touch printing) Gas injection in aqueous media) | Crystalline (Exfoliation) Amorphous (gas Injection) |
HfO2 | Galinstan-Hf | vdW exfoliation (Touch printing) Gas injection in aqueous media | Crystalline (Exfoliation) Amorphous (gas Injection) |
SnO | Tin (Sn) | vdW exfoliation (Touch printing) | Crystalline, p-type, ambipolar characteristics |
Bi2O3 | Bismuth | vdW exfoliation (Touch printing), oxidation in controlled atmosphere | Crystalline |
SnO/In2O3 | Tin (Sn)-Indium (In) | Sequential vdW exfoliation (Touch printing) | Crystalline, p-n heterojunction |
SnOx | Tin–Bismuth | Oxygen gas injection into Sn-Bi alloy covered by non-aqueous solvents | SnOx amorphous nanoflakes and SnOx crystalline nanorods |
MnO2 | Gallium-Indium (EGaIn) | Galvanic replacement of galinstan particles by MnO4− | Metallic core/2D MnO2 shell Crystalline |
MnO2 | Gallium-Indium (EGaIn) | Galvanic replacement of galinstan particles by MnO4− | Metallic core/2D MnO2 shell Crystalline |
MoSx | Galinstan | Cathodic reaction in aqueous solution containing the (NH4)2MoS4 | Crystalline |
CuxO | Galinstan | Chemical interaction of Galinstan in NH4OH + CuSO4 solution | Morphology dependence to PH content (from crystalline nanosheets to dendrites) |
TiO2 | Gallium-Ti | Metal alloying, Gas injection in aqueous media | Crystalline, Wrinkled nanosheets |
GaPO4 | Gallium | vdW exfoliation (Touch printing) Reaction with Phosphorous at 350 °C (N2 + H3PO4) | Crystalline |
GaN | Gallium | vdW exfoliation (Touch printing) Ammonolysis reaction | Crystalline, high carrier mobility of 21.5 cm2V−1 s−1 |
InN | Indium | vdW exfoliation (Touch printing) Bromination + Ammonolysis reactions | Crystalline |
SnS | Stanium | vdW exfoliation (Touch printing) Reaction with H2 at 600 °C | Crystalline |
Ga2S3 | Gallium | vdW exfoliation (Touch printing) Reaction with H2S at 600 °C | Crystalline |
Bi2S3 | Bismuth | vdW exfoliation (Touch printing) Reaction with H2S at 450 °C | Crystalline |
In2S3 | Indium | vdW exfoliation (Touch printing) Reaction with H2S at 450 °C | Crystalline with sandwiched structure |
WS2/Ga2O3 | Galinstan | vdW exfoliation (Touch printing) and transfer of 2D Ga2O3 film on the surface of monolayer WS2 | Passivation of monolayer WS2 via glassy Ga2O3 2D film |