Review of Recent Progress on Vertical GaN-Based PN Diodes

Table 1 Material parameters of Si, GaAs, 4H-SiC, GaN, Ga₂O₃, and diamond

Materials	E_g	ε	µ_n	E_c	V_sat	Thermal conductivity	BFOM
Si	1.12	11.7	1450	0.3	1	130	1
GaAs	1.42	12.9	8500	0.4	2	54	15
4H-SiC	3.26	10	950	3.0	2	500	340
GaN	3.39	9	1000	3.3	2.5	130	870
β-Ga₂O₃	4.8–4.9	10	300	8	2	20	3444
Diamond	5.6	5.7	4000	10	3	2000	24,664

E_g (eV), ε, µ_n (cm²/V s), E_C (MV/cm), V_sat (10⁷ cm/s) and BFOM (εµE_b³, to Si) are energy bandgap, relative dielectric constant, electron mobility, critical electric field, saturation velocity and Baliga’s figure of merit, respectively, and thermal conductivity of (W/m K) [4, 5]