Fig. 6From: Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Densitya Radiative recombination rates of 2QWs LED with various doping concentrations in p-GaN. b Carrier current distribution with different doping concentrations in p-GaN. c Enlarged energy band diagrams of EBL with different doping concentrations in p-GaN. d Average hole concentration in p-GaN and QWs with various doping concentrations of p-GaNBack to article page