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Table 1 Effective energy barrier height of different EBL structures for electrons and holes at 200 and 0.1 A/cm2, respectively

From: Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

EBL

@ 200 A/cm2

@ 0.1 A/cm2

ΔEelectron (meV)

ΔEhole (meV)

ΔEelectron (meV)

ΔEhole (meV)

Al0.20Ga0.80 N

274

303

523

485

Al0.15Ga0.85 N

261

262

510

480

Al0.10Ga0.90 N

247

267

521

473

Al0.04Ga0.96 N

256

259

655

469

w/o EBL

265

239

674

409

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