Fig. 2From: A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistora \(I_{{{\text{ds}}}}{-}V_{{{\text{gs}}}}\) transfer characteristics and b variation in SS and the \(I_{{{\text{on}}}}{-}I_{{{\text{off}}}}\) ratio of the proposed B-TFET with different \(N_{D}\); the reversely biased 2-dimensional potential distribution with c ND = 1019 cm−3 and d ND = 1021 cm−3Back to article page