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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Fig. 3

a \(I_{{{\text{ds}}}}{-}V_{{{\text{gs}}}}\) characteristics; b variation in the SS and the \(I_{{{\text{on}}}}{-}I_{{{\text{off}}}}\) ratio of the proposed B-TFET with different LN+; 2-dimensional hole concentration distribution of the proposed B-TFET under reversely biased for LN+ equal to (3) 2 nm and (4) 80 nm

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