Fig. 4From: An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Arraya DC forming/set/reset sweep characteristics, which bit lines (BL), are grounded. b Current levels after 50 set/reset operations. LRS/HRS are defined as 5 μA/0.5 μA, respectively, to obtain 10 × on/off ratioBack to article page