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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

Fig. 6

a 100 k ISPP set/reset cycles. Cells lost read widows after 6 k cycles can be recovered by 5 strong reset pulse with conditions VWL = 1.2 V, VSL = 2 V and pulse width of 50 μs. The reset recovery treatment is invalid after 10 k cycles. b Set/reset time required to complete state switch during 100 k cycles. c Shift in cell type, defined by their noise features, are found during ISPP cycling tests

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