Fig. 15

Different approaches applied for charge trapping. a) Illustrations of electrons’ drift in G-TENG and the schematic diagram of electrons’ escape from PDMS to the gold (Reproduced with permission from Ref. [91]). b Distribution of GO on a nanofiber and stored charge on the surface of a GO sheet (Reproduced with permission from Ref. [94]). c Illustration of the vertical contact-separation mode TENG with a MoS₂-monolayer film and a schematic diagram of the electron transfer from the PI layer to the MoS₂ monolayer (Reproduced with permission from Ref. [97]). d Schematic of the transport process of triboelectric electrons in the negative friction layer of a TENG and improvement effects of different composite friction layer structure (Reproduced with permission from Ref. [98]). e Illustration of the vertical contact-separation mode TENG with a PI:rGO film and a schematic diagram of electron transfer from the PI layer to the rGO sheets (Reproduced with permission from Ref. [99])