Fig. 2From: The Photodetectors Based on Lateral Monolayer MoS2/WS2 HeterojunctionsOptoelectronic characteristics of the photodetector. (a) The schematic diagram and proposed band alignment of the photodetector. The optical image (b) and corresponding combined Raman mapping (c) of the photodetector. E1 and E2 represent the source and drain electrodes of the measured device. The semi-logarithmic (d) and linear (inset of (d)) I–V characteristics and the photoswitching characteristics (e) of the photodetectorBack to article page