Fig. 4From: Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes CharacteristicsSimulated breakdown voltage versus JTE implant concentration for surface negative charge, including no charge, 1 × 1011 cm−2, 5 × 1011 cm−2, 1 × 1012 cm−2, 5 × 1012 cm−2, and 1 × 1013 cm−2 respectivelyBack to article page