Fig. 5From: Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes CharacteristicsSimulated electric field distributions of SiC PiN with surface negative charge density of 1 × 1011 cm−2 and 5 × 1012 cm−2: a electric field distribution with the depletion region evolution b electric field cutline below the JTE/n-drift region junction. The implant concentration is used 6 × 1016 cm−3Back to article page