Skip to main content
Fig. 16 | Nanoscale Research Letters

Fig. 16

From: The Design of the Emission Layer for Electron Multipliers

Fig. 16

Atomic concentration percentage of C, Al, Si elements relative to Mg element obtained by XPS. a Shows the Al element information of deliquescent MgO/Al2O3 (on the silicon wafer, grow 35 nm-MgO, and then grow 0.3 nm-Al2O3), a shows the C element information of deliquescent MgO/Al2O3 (on the silicon wafer, grow 35 nm-MgO, and then grow 0.3 nm-Al2O3), c shows the C element information of deliquescent MgO (on the silicon wafer, grow 11 nm-MgO), d shows the Si element information of deliquescent MgO (on the silicon wafer, grow 11 nm-MgO), e shows the C element information of deliquescent MgO/Al2O3 (on the silicon wafer, grow 35 nm-MgO, and then grow 1 nm-Al2O3). f shows the Al element information of deliquescent MgO/Al2O3 (on the silicon wafer, grow 35 nm-MgO, and then grow 1 nm-Al2O3)

Back to article page