Fig. 16From: The Design of the Emission Layer for Electron MultipliersAtomic concentration percentage of C, Al, Si elements relative to Mg element obtained by XPS. a Shows the Al element information of deliquescent MgO/Al2O3 (on the silicon wafer, grow 35 nm-MgO, and then grow 0.3 nm-Al2O3), a shows the C element information of deliquescent MgO/Al2O3 (on the silicon wafer, grow 35 nm-MgO, and then grow 0.3 nm-Al2O3), c shows the C element information of deliquescent MgO (on the silicon wafer, grow 11 nm-MgO), d shows the Si element information of deliquescent MgO (on the silicon wafer, grow 11 nm-MgO), e shows the C element information of deliquescent MgO/Al2O3 (on the silicon wafer, grow 35 nm-MgO, and then grow 1 nm-Al2O3). f shows the Al element information of deliquescent MgO/Al2O3 (on the silicon wafer, grow 35 nm-MgO, and then grow 1 nm-Al2O3)Back to article page