Fig. 11From: Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTsa The percentage change of energy E with aluminum concentration when surface donor energy changes deep to shallow. b Drain current and VDS = 0.1 V and VGS = 0 V at different surface donor traps energy. Up to 10% no significant current observed in the deviceBack to article page