Fig. 3From: Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devicesa The configuration of the Pt/CABB/ITO/glass memory device. I–V curves for the device in dark (b) and under light irradiation (c), respectively. The numbers and arrows represent the voltage sweeping sequences and directions, respectively. d Time up to over 1200 s for HRS, LRS-1 and LRS-2 measurements under the light illumination of 445 nm at room temperatureBack to article page