Fig. 7From: Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devicesa UPS spectrum of the CABB film at cutoff region obtained with \(h\nu =21.22\) eV. The inset depicts the Fermi edge of CABB. b Cutoff region of the ITO-coated glass. The inset displays the Fermi edge of the ITO layerBack to article page