Device
|
---|
C60 thickness
|
R (AW−1)a
|
D* (× 1011 Jones)a
|
Idark (μA)a
|
---|
Wavelength (nm)
|
405
|
450
|
532
|
655
|
808
|
405
|
450
|
532
|
655
|
808
|
---|
0-nm
|
0.94
|
1.64
|
1.79
|
2.57
|
0.68
|
0.10
|
0.18
|
0.19
|
0.28
|
0.07
|
1615.0
|
5-nm
|
1.11
|
1.56
|
1.15
|
1.96
|
0.41
|
0.50
|
0.70
|
0.52
|
0.88
|
0.19
|
92.1
|
10-nm
|
1.34
|
2.30
|
1.97
|
1.41
|
0.34
|
1.15
|
1.96
|
1.69
|
1.21
|
0.29
|
25.6
|
20-nm
|
0.91
|
1.55
|
1.27
|
0.62
|
0.27
|
0.32
|
0.55
|
0.45
|
0.22
|
0.10
|
149.0
|
30-nm
|
0.44
|
0.87
|
0.86
|
0.41
|
0.16
|
0.14
|
0.28
|
0.28
|
0.13
|
0.05
|
179.8
|
- aAll results were obtained at a reverse bias voltage of − 10 V and an incident optical power of ~ 0.1 mW