Fig. 1From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafera Photograph of 4-inch freestanding GaN wafer, where the letters SZU can be clearly seen. b The mobility of GaN wafer. c The dislocation density and CL image of the epitaxial layer. d The fabrication process. e The schematic of energy band lined-up at the Al2O3/GaN heterointerface. f 3D drawing structure and g micrograph of the fabricated GaN TG-MOSFETBack to article page