Fig. 2From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafera Transfer I–V characteristics (ID–VG) at VDS = 0.5 V. b Output I–V characteristics (ID–VD) at VGS = 0 V, 5 V, 10 V, 15 V and 20 V, respectively. c Off-state I–V characteristics measured at VG = 0 V for fabricated GaN TG-MOSFETBack to article page