Fig. 3From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN WaferElectron concentration distributed at a VGS = 0 V, VDS = 0.5 V (off-state) and b VGS = 20 V, VDS = 0.5 V (on-state). The energy band distributed during c off-state and d on-stateBack to article page