Fig. 5From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafera–f Depletion region at different reverse bias under Na = 2.0 × 1017 cm−3 and Lchannel = 1.2 μm, including VDS = 200 V, 400 V, 800 V, 1000 V, 1500 V and 2000 V. g Electric Field distributed along line B at VDS = 2000 VBack to article page