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Fig. 7 | Nanoscale Research Letters

Fig. 7

From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Fig. 7

a Simulated Ron,sp and VBR of the device versus Ldrift and Nd. b Vth and FOM as a function of Ldrift and Nd. c Simulated Ron,sp and VBR of the device versus Ltrench and Nd. d Vth and FOM as a function of Ltrench and Nd. In (a)–(d), the square, circle and triangle curves were simulated under Nd = 6.0 × 1015 cm−3, Nd = 8.0 × 1015 cm−3 and Nd = 1.0 × 1016 cm−3, respectively

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