Fig. 8
From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
a Simulated Ron,sp and VBR of the device versus Lchannel and Na. b Vth and FOM as a function of Lchannel and Na. In (a) and (b), the square, rhombus, circle and triangle curves were simulated under Na = 2.0 × 1017 cm−3, Na = 8.0 × 1017 cm−3, Na = 1.0 × 1018 cm−3 and Na = 3.0 × 1018 cm−3, respectively. c Simulated Ron,sp and VBR of the device versus Ldielectric. d Vth and FOM as a function of Ldielectric