Table 1 The main model and parameter values for TCAD simulation
From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
Model | Parameter | Value | Unit |
|---|---|---|---|
Incomplete ionization | gD | 2 | – |
ED,0 | 0.017 | eV | |
θn | 3.4 × 10–9 | eV·cm | |
gA | 2 | – | |
EA,0 | 0.16 | eV | |
θp | 3.14 × 10–8 | eV·cm | |
Low field mobility | µ1n | 250 | cm2/V·s |
µ2n | 1150 | cm2/V·s | |
Nrefn | 2 × 1017 | cm−3 | |
ρn | 1.0 | – | |
µ1p | 10 | cm2/V·s | |
µ2p | 170 | cm2/V·s | |
Nrefp | 3 × 1017 | cm−3 | |
ρp | 2.0 | – | |
Impact ionization | AN | 2.1 × 109 | cm−1 |
BN | 3.4 × 107 | cm−1 | |
AP | 5.4 × 106 | V/cm | |
BP | 1.8 × 107 | V/cm | |
BETAN | 1.0 | – | |
BETAP | 1.0 | – |