Fig. 2
From: Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
a Dual-direction sweeping of ID-VG curves of the amorphous HfO2 NVFET. b Measured ID-VG curves of the device with ± 3 V W/E pulses, and the pulse width varies from 100 ns to 1 ms. c MW for the amorphous HfO2 NVFET with various pulse width. d Stable MW maintains after 106 W/E cycles underwent ± 3 V, 100 ns W/E pulses. e Several hundred seconds retention time was maintained of the amorphous HfO2 device