Fig. 3
From: Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
Base voltage varies from 0.5 to -1.5 V. The widths of VG pulses in a–d are 1 μs, 100 μs, 1 ms, and 10 ms, respectively
Fig. 3 | Nanoscale Research Letters