Fig. 3From: Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 FilmBase voltage varies from 0.5 to -1.5 V. The widths of VG pulses in a–d are 1 μs, 100 μs, 1 ms, and 10 ms, respectivelyBack to article page