Fig. 10From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layera The characteristic of Ion–Ioff for N-type GAA and NC-GAA FinFETs with the same MGN. The 1D conduction band energy profiles and the zoom-in plots for b Cases 1 and 2 and c Cases 4 and 5 for GAA and NC-GAA FinFETs. The distribution of current density for d Cases 2 and 3 and e Cases 5 and 6 for GAA and NC-GAA FinFETs, respectively. f The characteristic of Ion–Ioff for P-type GAA and NC-GAA FinFETs with the same MGNBack to article page