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Fig. 10 | Nanoscale Research Letters

Fig. 10

From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

Fig. 10

a The characteristic of IonIoff for N-type GAA and NC-GAA FinFETs with the same MGN. The 1D conduction band energy profiles and the zoom-in plots for b Cases 1 and 2 and c Cases 4 and 5 for GAA and NC-GAA FinFETs. The distribution of current density for d Cases 2 and 3 and e Cases 5 and 6 for GAA and NC-GAA FinFETs, respectively. f The characteristic of IonIoff for P-type GAA and NC-GAA FinFETs with the same MGN

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