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Fig. 12 | Nanoscale Research Letters

Fig. 12

From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

Fig. 12

a The schematic plot of the inverter circuit. The voltage transfer curve for b GAA and c NC-GAA FinFETs. The NML and NMH depend on VIL and VIH which are denoted in the plots. The comparison of NML and NMH for d GAA and e NC-GAA FinFETs. f The Vin and Vout versus time for two different devices. The zoom-in plots which define the characteristics of g tHL and tf and h tLH and tr for GAA FinEETs. i The comparison of σtf, σtr and στp for GAA and NC-GAA FinFETs

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