Fig. 7
a A comparison of SS for N-/P-type GAA and NC-GAA FinFETs. The FE layer has the strong NC effect which causes SS lower than 60 mV/decade. A comparison of Cg for b N-/, c P-type GAA and NC-GAA FinFETs. Cg is increased as the fin height increases. d τP of GAA and NC-GAA FinFETs. τP of NC-GAA FinFETs is lower than that of GAA FinFETs in each fin height condition