Fig. 8From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO LayerThe WKF with random 500 devices for MGNs are a 84, b 102 and c 120. The distribution profiles of d Ion and e Ioff versus HWKF numbers for N-/P-type GAA and NC-GAA FinFETs with the fixed MGN. f The comparison of σVth versus the different MGNs. It can be observed that the σVth of GAA FinFETs is smaller than that of NC-GAA FinFETs. It implies that NC-GAA FinFETs perform more sensitively induced by the WKFBack to article page