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Fig. 8 | Nanoscale Research Letters

Fig. 8

From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

Fig. 8

The WKF with random 500 devices for MGNs are a 84, b 102 and c 120. The distribution profiles of d Ion and e Ioff versus HWKF numbers for N-/P-type GAA and NC-GAA FinFETs with the fixed MGN. f The comparison of σVth versus the different MGNs. It can be observed that the σVth of GAA FinFETs is smaller than that of NC-GAA FinFETs. It implies that NC-GAA FinFETs perform more sensitively induced by the WKF

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