Fig. 9From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layera The comparison of Vth distribution profile of random 500 fluctuated devices. The 1D conduction band energy profiles which are corresponding to six cases for b GAA and c NC-GAA FinFETs. d The relevant Vth distribution comparison profile of P-type devicesBack to article page