Table 1 Summary of electrical characteristics for GAA, bulk and SOI FinFETs, where they have the similar fin height of 20 nm, fin width of 17 nm, gate length of 22 nm, and EOT of 0.9 nm

From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer