Account

Table 5 The standard deviation of V_th, I_on and I_off for N-/P-type GAA and NC-GAA FinFETs under the same MGN (MGN = 102)

From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

	GAA FinFET		NC-GAA FinFET
	N-FET	P-FET	N-FET	P-FET
σV_th (mV)	12.73	11.69	17.11	16.49
σI_on (μA)	2.85	1.93	3.84	3.03
σlogI_off (pA)	0.19	0.17	0.30	0.29

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